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HER103 8BCPZR MK107 00250 G5P109LF 000X1 34012 9S12G
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  sft1192/59 features: data sheet #: tr0008c maximum ratings symbol units value v ebo 10 volts emitter-base voltage v cbo 500 volts collector-base voltage i c 2 collector current collector-emitter voltage r be = 1 kohms v ceo v cer 400 500 amps volts o c w mw/ o c o c/w ?bv ceo 400v. ? fast switching. ? high frequency. ? low saturation voltage. ? 200 o c operating, gold eutectic die attach. ? designed for complementary use with sft6800. 2 amp 500 volts pnp transistor operating and storage temperature t j, t stg -65 to +200 20 133 thermal resistance, junction to case r q q q q q jc 7.5 total device dissipation @ t c =100 o c derate above 25 o c p d i b 0.5 base current amps designer's data sheet note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. to-59 case outline: to-59 pin out: 1 - collector 2 - base 3 - emmiter solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
sft1192/59 v 400 500 - - bv ceo bv cer collector-emitter breakdown voltage v 500 - collector-base breakdown voltage (i c = 100ua dc ) v 10 - bv ebo emitter-base breakdown voltage (i e = 20ua dc ) m m m m m a - 1.0 i cbo collector cutoff current (v cb = 450v dc ) m m m m m a -10 i cev collector cutoff current (v ce = 400v dc , v eb = 1.5v dc ) min max electrical characteristics symbol units m m m m m a emitter cutoff current (v eb = 6v dc ) - i ebo 10 dc current gain* (v ce =10v dc ) 80 60 40 0.4 2.0 collector-emitter saturation voltage* v ce(sat) v dc h fe base-emitter saturation voltage* 1.5 2.0 v dc v be (sat) current gain bandwidth product (i c = 70ma dc , v ce = 30v dc, f = 20mhz) 50 - mhz ft 75 pf output capacitance (v cb = 20v dc , i e = 0a dc, f = 1.0mhz) - c ob 300 pf input capacitance (v be = 2v dc , i c = 0a dc, f = 1.0mhz) - c ib (v cc = 100v dc , i c = 500ma dc , v eb(off) =3.7v dc , i b1 =i b2 = 50ma dc ) turn off time *pulse test: pulse width = 300 m m m m m s, duty cycle = 2% t (on) 250 ns t (off) 2500 ns bv cbo turn on time (i c =50ma dc, i b = 5ma dc ) (i c =500ma dc, i b =50ma dc ) (i c = 1.0ma dc ) (i c = 50ma dc ) (i c = 500ma dc ) (i c =50ma dc, i b = 5ma dc ) (i c =500ma dc, i b =50ma dc ) - - - - - - - - - (i c =5ma dc ) (i c =100ma dc , r be =1k w ) solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com


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